Integrated Circuit with Separate Supply Voltage for Memory That is Different from Logic Circuit Supply Voltage

ABSTRACT

In one embodiment, an integrated circuit comprises at least one logic circuit supplied by a first supply voltage and at least one memory circuit coupled to the logic circuit and supplied by a second supply voltage. The memory circuit is configured to be read and written responsive to the logic circuit even if the first supply voltage is less than the second supply voltage during use. In another embodiment, a method comprises a logic circuit reading a memory cell, the logic circuit supplied by a first supply voltage; and the memory cell responding to the read using signals that are referenced to the first supply voltage, wherein the memory cell is supplied with a second supply voltage that is greater than the first supply voltage during use.

This application is a divisional of U.S. patent application Ser. No.12/325,476, filed on Dec. 1, 2008, which is a continuation of U.S.patent application Ser. No. 12/034,071, filed on Feb. 20, 2008, which isa divisional of U.S. patent application Ser. No. 11/173,565, which wasfiled on Jul. 1, 2005 and is now U.S. Pat. No. 7,355,905.

BACKGROUND

1. Field of the Invention

This invention is related to the field of integrated circuits includingintegrated memories such as static random access memory (SRAM) and, moreparticularly, to supplying power to such integrated circuits.

2. Description of the Related Art

As the number of transistors included on a single integrated circuit“chip” has increased and as the operating frequency of the integratedcircuits has increased, the management of power consumed by anintegrated circuit has continued to increase in importance. If powerconsumption is not managed, meeting the thermal requirements of theintegrated circuit (e.g. providing components required to adequatelycool the integrated circuit during operation to remain within thermallimits of the integrated circuit) may be overly costly or eveninfeasible. Additionally, in some applications such as battery powereddevices, managing power consumption in an integrated circuit may be keyto providing acceptable battery life.

Power consumption in an integrated circuit is related to the supplyvoltage provided to the integrated circuit. For example, many digitallogic circuits represent a binary one and a binary zero as the supplyvoltage and ground voltage, respectively (or vice versa). As digitallogic evaluates during operation, signals frequently transition fullyfrom one voltage to the other. Thus, the power consumed in an integratedcircuit is dependent on the magnitude of the supply voltage relative tothe ground voltage. Reducing the supply voltage generally leads toreduced power consumption. However, there are limits to the amount bywhich the supply voltage may be reduced.

One limit to the reduction of supply voltage that is experienced inintegrated circuits that integrate memories (such as SRAM) is related tothe robustness of the memory. As supply voltage decreases below acertain voltage, the ability to reliably read and write the memorydecreases. The reduced reliability may have several sources. Theresistances of some devices in the memory (e.g. the pass gatetransistors that couple bit lines to memory cells in an SRAM) may changeas the supply voltage falls. The changed resistance may impact theability to overdrive the memory cell for a write or to discharge the bitline for a read. Additionally, in some designs, the transistors in thememory are high threshold voltage (high V_(T)) transistors. That is, thethreshold voltage at which the transistors activate (or “turn on” . . .i.e. actively conduct current) is higher than other transistors in theintegrated circuit. The threshold voltage of such transistors does notscale well with supply voltage. Accordingly, the “trip point” (the pointat which a write to a memory cell occurs) as a percentage of the supplyvoltage worsens as the supply voltage is decreased. As an example, inone current integrated circuit manufacturing process, a supply voltagebelow about 0.9 volts results in reduced ability to write the memoryreliably. Similarly, the ability to quickly and/or reliably read thememory decreases. Accordingly, the supply voltage at which therobustness of the memory begins to be impacted has served as a floor toreducing the supply voltage to an integrated circuit that includesmemory.

SUMMARY

In one embodiment, an integrated circuit comprises at least one logiccircuit supplied by a first supply voltage and at least one memorycircuit coupled to the logic circuit and supplied by a second supplyvoltage. The memory circuit is configured to be read and writtenresponsive to the logic circuit even if the first supply voltage is lessthan the second supply voltage during use.

In another embodiment, a method comprises a logic circuit reading amemory cell, the logic circuit supplied by a first supply voltage; andthe memory cell responding to the read using signals that are referencedto the first supply voltage, wherein the memory cell is supplied with asecond supply voltage that is greater than the first supply voltageduring use.

BRIEF DESCRIPTION OF THE DRAWINGS

The following detailed description makes reference to the accompanyingdrawings, which are now briefly described.

FIG. 1 is a block diagram of one embodiment of an integrated circuit.

FIG. 2 is a block diagram of one embodiment of a memory circuit shown inFIG. 1.

FIG. 3 is a circuit diagram of one embodiment of a memory array shown inFIG. 2.

FIG. 4 is a circuit diagram of one embodiment of a level shifter shownin FIG. 2.

FIG. 5 is a circuit diagram of another embodiment of a level shiftershown in FIG. 2.

FIG. 6 is a circuit diagram of one embodiment of a word line drivershown in FIG. 2.

FIG. 7 is a flowchart illustrating one embodiment of a method.

While the invention is susceptible to various modifications andalternative forms, specific embodiments thereof are shown by way ofexample in the drawings and will herein be described in detail. Itshould be understood, however, that the drawings and detaileddescription thereto are not intended to limit the invention to theparticular form disclosed, but on the contrary, the intention is tocover all modifications, equivalents and alternatives falling within thespirit and scope of the present invention as defined by the appendedclaims.

DETAILED DESCRIPTION OF EMBODIMENTS

Turning now to FIG. 1, a block diagram of one embodiment of anintegrated circuit 10 is shown. In the illustrated embodiment, theintegrated circuit includes a plurality of logic circuits 12 and aplurality of memory circuits 14. The logic circuits 12 are coupled tothe memory circuits 14. The logic circuits 12 are powered by a firstsupply voltage provided to the integrated circuit 10 (labeled V_(L) inFIG. 1). The memory circuits 14 are powered by a second power supplyvoltage provided to the integrated circuit 10 (labeled V_(M) in FIG. 1).In the illustrated embodiment, the memory circuits 14 are also poweredby the V_(L) supply voltage, as will be explained in more detail forcertain embodiments below. The integrated circuit 10 may generallycomprise the logic circuits 12 and the memory circuits 14 integratedonto a single semiconductor substrate (or chip).

The logic circuits 12 may generally implement the operation for whichthe integrated circuit is designed. The logic circuits 12 may generatevarious values during operation, which the logic circuits 12 may storein the memory circuits 14. Additionally, the logic circuits 12 may readvarious values from the memory circuits 14 on which to operate. Forexample, in various embodiments, the memory circuits 14 may includememory used for caches, register files, integrated-circuit-specific datastructures, etc. The memory circuits 14 may implement any type ofreadable/writeable memory. In an example below, an SRAM memory will beused. It is noted that, while the illustrated embodiment includes aplurality of logic circuits 12 and a plurality of memory circuits 14,various embodiments may include at least one logic circuit 12 and atleast one memory circuit 14.

Generally, if a logic circuit 12 is to access a memory circuit 14, thelogic circuit 12 may generate various control signals to the memorycircuit 14. For example, the control signals may include an addressidentifying the memory location in the memory circuit 14 that is to beaccessed, a read enable signal which may be asserted to perform a read,and a write enable signal which may be asserted to perform a write. Fora read, the memory circuit 14 may output data to the logic circuit 12.For a write, the logic circuit 12 may supply data to the memory circuit14 for storage.

By separating the supply voltage for the logic circuits 12 and thememory circuits 14, the supply voltage for the logic circuits 12 (V_(L))may be reduced below the level at which the memory circuits 14 mayoperate robustly. The supply voltage for the memory circuits 14 (V_(M))may be maintained at the minimum supply voltage that provides for robustmemory operation (or greater, if desired). Thus, the V_(L) supplyvoltage may be less than the V_(M) supply voltage during use. At othertimes, the V_(L) supply voltage may exceed the V_(M) supply voltageduring use (e.g. at times when higher performance is desired and higherpower consumption is acceptable to achieve the higher performance).Alternatively, the V_(M) supply voltage may be increased to match theV_(L) supply voltage if the V_(L) supply voltage would otherwise exceedthe V_(M) supply voltage.

Generally, a supply voltage may be a voltage provided to a circuit topower the circuit, providing the electrical energy to permit the circuitto generate one or more outputs responsive to one or more inputs. Atvarious points herein, supply voltages may be referred to as beinggreater than or less than other supply voltages. That is, the magnitudeof the voltage may be greater than (or less than) the magnitude of theother voltage.

Turning now to FIG. 2, a block diagram of one embodiment of a memorycircuit 14A is shown. The memory circuit 14A may be one of the memorycircuits 14. Other memory circuits 14 may be similar. In the embodimentof FIG. 2, the memory circuit 14A includes a level shifter circuit 20, aset of word line driver circuits 22, a memory array 24, a clock gatercircuit 26, and a control signal generator circuit 28. The level shifter20 and the word line drivers 22 are supplied by the V_(M) supplyvoltage. The memory array 24 and the control signal generator 28 aresupplied by both the V_(M) and the V_(L) supply voltages. The clockgater 26 is supplied by the V_(L) supply voltage. The level shifter 20and the clock gater 26 are coupled to receive a clock input (gclk) andone or more enable inputs (En) from the logic circuits 12. The clockgater 26 is configured to generate a clock output (clk) to the word linedrivers 22 and the level shifter 20 is also configured to generate aclock output (clk_e) to the word line drivers 22. The word line drivers22 are further coupled to receive one or more address inputs (Addrinputs) from the logic circuits 12. The word line drivers 22 areconfigured to generate a set of word lines to the memory array 24 (WL0 .. . WLN). The memory array 24 is further coupled to receive data (Din)and provide data (Dout) to/from the logic circuits 12. Additionally, thememory array 24 is coupled to receive various control signals from thecontrol signal generator 28. For example, the control signals mayinclude a write enable (WE) signal and a read enable (RE) signal. Thecontrol signal may also include a precharge (PChg) signal, and any otherdesired control signals. The control signal generator 28 may generatethe control signals for the memory array 24 from corresponding controlinputs from the logic circuits 12, and may level shift control signals,in some embodiments.

The memory array 24 may comprise a plurality of memory cells that aresupplied by the V_(M) supply voltage. However, the memory circuit 14A isdesigned to provide for access to the memory array 24 by the logiccircuits 12, even if the logic circuits 12 are supplied with a V_(L)supply voltage that is less than the V_(M) supply voltage. Each memorycell is activated for access (read or write) by one of the word linesWL0 . . . WLN coupled to that memory cell. One or more memory cellscoupled to the same word line form a “word” for access in the memoryarray 24. That is, the bits of the word may be read/written as a group.The width of the word may thus be the width of the Din and Dout signalsfrom the memory array 24.

Since the memory cells are supplied by the V_(M) supply voltage, theword lines may also be supplied by the V_(M) supply voltage. That is,when a word line is asserted high, the word line may be at approximatelya V_(M) voltage. Thus, the word line drivers 22 are supplied with theV_(M) supply voltage.

The word line drivers 22 activate a given word line based on addressinputs from the logic circuits 12. The address identifies the word inthe memory array 24 to be accessed for a given access generated by thelogic circuits 12. In some embodiments, the logic circuits 12 mayinclude circuits that partially or fully decode the address, and theaddress inputs may be the partially or fully decoded address.Alternatively, the word line drivers 22 may implement the full decodefunction and the address inputs may encode the address. Generally, eachdifferent address causes a different word line WL0 to WLN to beasserted.

Since the word line drivers 22 are supplied with the V_(M) supplyvoltage, inputs to the word line drivers 22 that are coupled to thegates of p-type metal oxide semiconductor (PMOS) transistors in the wordline drivers 22 may be driven to a V_(M) voltage when driven high (toensure that the PMOS transistors, which are supplied with a V_(M) supplyvoltage, are fully turned off when the gate is driven high). That is, ifthe gate of the PMOS transistor is driven to a voltage less than theV_(M) supply voltage on its source, the gate to source voltage of thePMOS transistor is still negative and thus the PMOS transistor may stillbe active even though it is logically intended to be inactive. If theword line drivers 22 were designed with static complementary MOS (CMOS)circuits, each input would be coupled to the gate of a PMOS transistorand would be driven to a V_(M) voltage when driven high. In oneembodiment, the word line drivers 22 may be implemented with dynamiclogic gates. Thus, the clock signal that precharges the circuit (clk_e)is coupled to the gate of a PMOS transistor and may be driven to a V_(M)voltage. Other signals, coupled to the gates of n-type MOS (NMOS)transistors, may be driven with the V_(L) voltage. Thus, the addressinputs from the logic circuits 12 may be provided directly to the wordline drivers 22 (without level shifting). Additionally, the clk signalfrom the clock gater 26 (supplied with the V_(L) voltage and thus drivento the V_(L) voltage when driven high) may be provided directly to theword line drivers 22.

The level shifter 20 is configured to generate the clk_e signalresponsive to the gclk signal and the En signal. If the En signal (orsignals) indicate that the clock is enabled for the current clock cycle,the level shifter 20 may generate the clk_e signal by level shifting thegclk signal such that the high assertion of the clk_e signal is at aV_(M) voltage. If the En signal (or signals) indicate that the clock isdisabled, the level shifter 20 may hold the clk_e signal steady at a lowlevel (ground). In other implementations, the level shifter 20 may holdthe clk_e signal steady at a high level (V_(M)) if the En signal (orsignals) indicate that the clock is disabled. The gclk signal, providedfrom the logic circuits 12, may be at a V_(L) voltage when assertedhigh.

Generally, a level shifter circuit may be a circuit configured to levelshift an input signal to produce an output signal. Level shifting asignal may refer to changing the high assertion of the signal from onevoltage to another. Level shifting may be performed in either direction(e.g. the voltage after level shifting may be higher or lower than thevoltage before level shifting). In some embodiments, the low assertionmay remain the ground voltage supplied to the integrated circuit 10 (notshown in the figures, often referred to as V_(SS)). A signal that isdriven to a high assertion equal to a given supply voltage may bereferred to as in the “domain” of that supply voltage or “referenced to”that supply voltage.

While the present embodiment provides enable signals and the levelshifter 20 has a clock gating function in addition to a level shiftingfunction, other embodiments may not include the enable signals and mayunconditionally generate the output signal from the input signals.Furthermore, in other embodiments, a level shifter 20 that does notintegrate the enable/disable function may be used with a clock gatersimilar to clock gater 26. The output of a clock gater may be levelshifted by such a level shifter, for example. Furthermore, a levelshifter 20 that does not implement the enable/disable function may beused without a clock gater 26 (e.g. for control signal generation in thecontrol signal generator 28). Additionally, other embodiments may employother constructions of the word line drivers 22 and additional signalsinput to the word line drivers 22 may be level shifted.

The clock gater 26 generates the clk signal responsive to the En signal(or signals) and the gclk signal (similar to the discussion above forthe level shifter). If the En signal (or signals) indicate that theclock is enabled for the current clock cycle, the clock gater 26 maygenerate the clk signal responsive to the gclk signal. If the En signal(or signals) indicate that the clock is disabled, the clock gater 26 mayhold the clk signal steady at a low level (ground). In otherimplementations, the clock gater 26 may hold the clk signal steady at ahigh level (V_(L)) if the En signal (or signals) indicate that the clockis disabled. In other embodiments, the clock gater 26 may be eliminatedand the clk_e signal may be used in place of the clk signal in the wordline drivers 22.

In some embodiments, the delay through the level shifter 20 may beapproximately the same as the delay through the clock gater 26. In suchembodiments, the impact of the level shifter 20 on the critical timingpath of the integrated circuit 10 (if any) may be minimized.

As mentioned above, the memory circuit 14A is designed to provideread/write access to the memory array 24 even if the V_(M) supplyvoltage is higher than the V_(L) supply voltage. The level shifter 20level-shifting input signals and the word line drivers 22 operating atthe V_(M) voltage provide the start of an access. The Din and Doutsignals provide the data in (for a write) or the data out (for a read),and thus are in the V_(L) domain used by the logic circuits 12 in thisembodiment. The memory array 24 may also be supplied with the V_(L)voltage, and may be configured to operate with the Din and Dout signalsin the V_(L) domain. In other embodiments, the Din and Dout signals maybe level shifted between the V_(L) and V_(M) domains, or only the Dinsignals may be level shifted and the Dout signals may be in the V_(M)domain.

In one embodiment, at least the sense amplifier (senseamp) circuits inthe memory array 24 that sense the bits read from the memory cells aresupplied with the V_(L) voltage. Thus, the senseamps may also provide alevel shift to the V_(L) domain for the Dout signals. In anotherembodiment, the senseamp circuits may be supplied with the V_(M) voltageand the Dout signals may be in the V_(M) domain. In anotherimplementation, the bit lines coupled to the memory cells to communicatethe bits into and out of the memory cells may be in the V_(L) domain andthus other circuitry that is coupled to the bit lines may be suppliedwith the V_(L) supply voltage (except for the memory cells themselves).

As mentioned previously, signals in the V_(L) domain that are coupled tothe gates of PMOS transistors that are supplied by the V_(M) supplyvoltage may be level shifted. Thus, in various embodiments, some of thecontrol signals provided to the memory array 24 may be level-shifted.The control signal generator 28 may provide the level shifting, asneeded, in various embodiments. If a given control signal is not levelshifted, the control signal generator 28 may generate the control signalusing circuitry supplied by the V_(L) supply voltage. If a given controlsignal is level shifted, the control signal generator 28 may include alevel shifter to shift to the V_(M) domain.

Turning now to FIG. 3, a circuit diagram of a portion of one embodimentof the memory array 24 is shown. The portion shown in FIG. 3 maycorrespond to bit 0 of the Din and Dout signals (shown as Din0 andDout0, respectively, in FIG. 3). Other portions similar to the portionshown in FIG. 3 may be implemented for other bits in the Din/Dout word.In the embodiment of FIG. 3, the memory array 24 includes bit linedriver circuits 30, memory cells 32A-32N, a bit line precharge circuit34, a bit line hold circuit 36, and a senseamp 38. The memory cells32A-32N are supplied with the V_(M) supply voltage. The bit line drivers30, the bit line precharge circuit 34, the bit line hold circuit 36, andthe senseamp 38 are supplied by the V_(L) supply voltage. The bit linedrivers 30, the memory cells 32A-32N, the bit line precharge circuit 34,the bit line hold circuit 36, and the senseamp 38 are coupled to a pairof bit lines (BL and BL bar, the latter labeled as BL with a bar over itin FIG. 3). The memory cell 32A is coupled to word line WL0, and thememory cell 32N is coupled to the word line WLN. Other memory cells, notexplicitly shown in FIG. 3 but indicated by the ellipses between thememory cells 32A and 32N, are coupled to other word lines. The bit lineprecharge circuit 34 is coupled to a precharge input signal (PChg inFIG. 3) that is in the V_(L) domain in the present embodiment. The bitline drivers 30 are coupled to receive the Din0 signal and the writeenable (WE) signal. The senseamp 38 is coupled to the Dout0 signal andthe read enable (RE) signal.

The memory cell 32A is shown in more detail in FIG. 3, and the othermemory cells such as memory cell 32N may be similar. The memory cell 32Ain FIG. 3 includes a typical CMOS SRAM cell comprising cross-coupledinverters 40A-40B coupled to the bit lines through NMOS transistors T₁and T₂. In some embodiments, the transistors in the memory cells 32A-32Nmay be high V_(T) transistors. The gates of the transistors T₁ and T₂are coupled to the word line WL0. Accordingly, when the word line WL0 isasserted high, the transistors T₁ and T₂ provide a conductive pathbetween the inverters 40A-40B and the bit lines. Since the word linesare in the V_(M) domain, the transistors T₁ and T₂ may have aresistance, when activated, as designed for the memory array 24. Theresistance is related to the gate to source voltage of the transistorsT₁ and T₂. The resistance of the transistors T₁ and T₂, as compared totransistors in the inverters 40A-40B which are also powered with theV_(M) voltage, may scale with the V_(M) voltage.

Generally, the bit lines may be used to transfer a bit into and out of amemory cell 32A-32N that is activated using the corresponding word line.The bit lines represent the bit differentially, with BL being the truevalue of the bit and BL bar being the complement of the bit.

To perform a write operation, the bit line drivers 30 may be activatedby asserting the WE signal. The bit line drivers 30 drive the Din0 biton the BL line, and the complement of the Din0 bit on the BL bar line.The write of the memory cell 32A-32N may primarily be accomplished bythe bit line that is driven low, and thus driving the bit lines in theV_(L) domain may be sufficient to reliably write the memory cell. Forexample, if the memory cell 32A is currently storing a binary 1 and isbeing written to a zero, the bit line drivers 30 drive the BL line lowand the BL bar line to V_(L). The PMOS transistor in the inverter 40B isattempting to hold the output of the inverter 40B at a logical one(V_(M) voltage). The bit line drivers 30 are designed to overdrive thetransistors in the inverters 40A-40B, and thus the output of theinverter 40B (input of the inverter 40A) is driven toward zero. Theoutput of the inverter 40A switches to a binary one as well, disablingthe PMOS transistor in the inverter 40B and completing the flip of thememory cell 32A. Thus, in the illustrated embodiment, the WE signal andthe Din0 signal may not be level shifted to the V_(M) domain.

In other embodiments, the bit lines may be in the V_(M) domain. The bitline drivers 30 may be dynamic, or may receive level-shifted Din0 and WEsignals in such embodiments. The bit line drivers 30 may further besupplied by the V_(M) supply voltage in such embodiments.

For read operations, the bit lines may be precharged prior to activatinga memory cell 32A-32N via a corresponding word line. The activatedmemory cell 32A-32N discharges one of the bit lines based on the storedvalue of the memory cell, and the senseamp 38 detects the differentialbetween the bit lines and amplifies the differential to produce theoutput bit Dout0. Since a differential is being sensed, as long as thebit lines are balanced at about the same voltage prior to the start ofthe read, the correct value may be read. Accordingly, operating the bitlines in the V_(L) domain may also be sufficient for read operations. Inother embodiments, if the bit lines are in the V_(M) domain (e.g. if thebit line precharge circuit 34 and the bit line hold circuit 36 aresupplied with the V_(M) supply voltage), the senseamp 38 may provide thelevel shifting of the signals back to the Dout0 signal in the V_(L)domain. In still other embodiments, the Dout0 signal may be in the V_(M)domain and the senseamp 38 may also be powered by the V_(M) supplyvoltage.

The senseamp 38 may comprise any sense amplifier circuit that is coupledto receive a pair of bit lines and sense a differential between the pairto drive an output bit. In other embodiments, the senseamp 38 may outputa differential pair of bits with full signal swing, amplified from thesensed differential on the bit lines. For example, a differential ofabout 100 millivolts on the bit lines may be sufficient for the senseamp38 to detect the difference. The senseamp 38 in the illustratedembodiment is controlled by the RE signal. In the illustratedembodiment, the RE signal is not level shifted to the V_(M) domain. Inother embodiments in which the senseamp 38 is supplied with the V_(M)voltage, the RE signal may be level shifted to the V_(M) domain if it iscoupled to one or more PMOS transistors in the senseamp 38 that are alsocoupled to the V_(M) supply voltage.

The bit line precharge circuit 34 is supplied by the V_(L) supplyvoltage, and may precharge the bit lines responsive to the assertion(low) of the PChg signal to prepare the bit lines for a read. In theillustrated embodiment, the bit line precharge circuit 34 may comprisePMOS transistors having their gates coupled to the precharge signal. ThePMOS transistors shown vertically in FIG. 3 may precharge the bit lines,and the horizontal PMOS transistor may provide balancing of the voltageon the bit lines. In other embodiments, two bit line precharge circuitsmay be used. One bit line precharge circuit may be used if the previousoperation was a read, since the bit lines are not fully discharged in aread operation. Both precharge circuits may be used if the previousoperation was a write, to precharge the bit line that was fully (oralmost fully) discharged to a voltage near ground. As mentionedpreviously, in other embodiments the bit line precharge circuit 34 maybe supplied by the V_(M) supply voltage and the PChg signal may be levelshifted to the V_(M) domain in such embodiments.

The bit line hold circuit 36 may be provided to hold the precharge onone of the bit lines during a read or write operation responsive to theother bit line falling. As mentioned previously, in other embodimentsthe bit line hold circuit 36 may be supplied by the V_(M) supplyvoltage.

While specific examples of the bit line precharge circuit 34 and the bitline hold circuit 36 are illustrated in FIG. 3, any designs for the bitline precharge circuit 34 and/or the bit line hold circuit 36 may beused in other embodiments.

While the memory cell 32A is shown as a CMOS SRAM cell, other memorycells may be used in other embodiments. Generally, a memory cell maycomprise circuitry configured to store a bit and configured to permitreading and writing of the bit.

Turning now to FIG. 4, a circuit diagram of one embodiment 20 a of thelevel shifter 20 is shown. In the embodiment of FIG. 4, the levelshifter 20 a includes a shifting stage comprising transistors T₃-T₉ andan output inverter comprising transistors T₁₀-T₁₃. T₃ has a sourcecoupled to the V_(M) supply voltage, a gate coupled to a node N1, and adrain coupled to the source of T₄. The gates of T₄ and T₅ are coupled tothe gclk signal, and the drains of T₄, T₅, and T₆ are coupled to thenode N2. The sources of T₅ and T₆ are coupled to ground. The gate of T₆is coupled to an inversion of the En signal, output from the inverter50. The output of the inverter 50 and the gclk signal are inputs to aNOR gate 52, which has its output coupled to the gates of T₈ and T₉. Thesource of T₉ is coupled to ground. The drains of T₈ and T₉ are coupledto the node N1. The source of T₈ is coupled to the drain of T₇, whichhas its source coupled to the V_(M) supply voltage. The gate of thetransistor T₇ is coupled to the node N2. The node N1 is the output ofthe shift stage and supplies the input to the output inverter. The gatesof T₁₁ and T₁₂ are coupled to the node N1, and the drains of T₁₁ and T₁₂are coupled to the clk_e signal. The source of T₁₁ is coupled to thedrain of T₁₀, which has its source coupled to the V_(M) supply voltageand its gate coupled to the V_(L) supply voltage. The source of T₁₂ iscoupled to the drain of T₁₃, which has its source coupled to ground. Thegate of T₁₃ is coupled to the V_(L) supply voltage.

Operation of the shift stage will first be described. For simplicity,the En signal will be assumed asserted to indicate enabled (and thus T₆is disabled and the NOR gate 52 passes the inversion of the gclksignal). When gclk transitions from low to high, T₅ is activated andbegins discharging node N2. T₄ is also deactivated by the gclktransition, isolating the node N2 from T₃. As the node N2 discharges, T₇activates and begins charging node N1 to the V_(M) supply voltage (T₈ isalso activated, and T₉ is deactivated, by the transition to low on theoutput of the NOR gate 52 due to the transition high of the gclksignal). Accordingly, N1 results in the same logical state as the gclksignal, at the V_(M) supply voltage. When gclk transitions from high tolow, the output of the NOR gate transitions from low to high and T₉ isactivated. T₉ begins discharging the node N1. T₈ is also deactivated bythe gclk transition, isolating the node N1 from T₇. Thus, the node N1 isdischarged to ground. As the node N1 discharges, T₃ activates and beginscharging node N2 to the V_(M) supply voltage (T₄ is also activated bythe transition to low of gclk), thus deactivating T₇.

T₄ and T₈ may limit power dissipation during transition, by isolatingthe nodes N2 and N1, respectively, from T₃ and T₇, respectively. T₃ andT₇ may be delayed in deactivating with respect to the activation of T₅and T₉, respectively, since T₃ and T₇ are deactivated through thecharging of nodes N1 and N2, respectively. By isolating T₃ and T₇ fromtheir respective nodes N2 and N1 when T₅ and T₉ are activated, T₃ and T₇may be prevented from fighting the discharge of their respective nodesN2 and N1. T₄ and T₈ are optional and may be deleted in otherembodiments. In such embodiments, the drains of T₃ and T₇ may be coupledto the drains of T₅ and T₉, respectively.

In this embodiment, the level shifter 20 a also provides clock gatingfunctionality via the enable signal. If the enable signal is deasserted(low), T₆ is activated via the output of the inverter 50 and T₈ isactivated via the output of the NOR gate 52. T₆ discharges node N2(which activates T₇). T₇ and T₈ in series charge node N1. T₃ isdeactivated as the node N1 is charged. Thus, the output node N1 may beheld steady at the V_(M) supply voltage if the enable signal isdeasserted, independent of the state of the gclk signal. In otherembodiments, the level shifter 20 a may not implement clock gating. Insuch embodiments, T₆ and the inverter 50 may be eliminated, and the NORgate 52 may be replaced by an inverter having the gclk signal as aninput.

The output inverter provides output buffering, which may permit thetransistors T₃-T₉ to be smaller. The output inverter is optional and maybe eliminated in other embodiments. T₁₁ and T₁₂ provide the inversion.In the illustrated embodiment, the transistors T₁₀ and T₁₃ are providedto aid in matching the delay of the level shifter 20 a to the clockgater 26. These transistors are optional and may be eliminated in otherembodiments. In such embodiments, the source of T₁₁ may be coupled tothe V_(M) supply voltage and the source of T₁₂ may be coupled to ground.Alternatively, only T₁₀ may be eliminated in other embodiments.

The embodiment of FIG. 4 provides an inversion of the gclk to the clk_esignals. That is, the gclk and clk_e signals may be approximately 180degrees out of phase (where the delay through the level shifter 20 a mayaccount for the signals being somewhat less than 180 degrees out ofphase). The embodiment of FIG. 5 is an example of a second embodiment ofthe level shifter 20 (level shifter 20 b) that provides a clk_eapproximately in phase with the gclk signal (but lagging due to thedelay of the level shifter 20 b).

The embodiment of FIG. 5 includes a shift stage comprising T₃-T₅ andT₇-T₉ and an output inverter comprising T₁₀-T₁₃. T₃-T₅, T₇-T₉, andT₁₀-T₁₃ are coupled to each other and to the nodes N1 and N2 in a mannersimilar to the embodiment of FIG. 4. T₃-T₅, T₇-T₉, and T₁₀-T₁₃ operatesimilar to the description of FIG. 4 responsive to the high and lowinputs on their gate terminals. Comments regarding portions that areoptional may be similar to the description of FIG. 4 as well. However,the gates of T₄ and T₅ are coupled to receive an inversion of the gclksignal, instead of the gclk signal, when the En signal is asserted(through a NAND gate 54). The output of the NAND gate 54 is inverted viathe inverter 56, the output of which is coupled to the gates of T₈ andT₉. Accordingly, the node N1 transitions low if the gclk signaltransitions high and the node N1 transitions high if the gclktransitions low. The output clk_e is the inversion of the node N1, andthus is approximately in phase with the gclk signal (lagging by thedelay of the level shifter 20 b). If the enable signal is deasserted,the output of the NAND gate 54 is high and the output of the inverter 56is low, thus holding the node N1 steady at the V_(M) supply voltage (andthe clk_e at the ground voltage) independent of the gclk signal.Embodiments of the level shifter 20 b that do not implement clock gatingmay replace the NAND gate 54 with an inverter (or may eliminate the NANDgate 54 and may couple the node N2 to the output inverter stage).

FIG. 6 is a circuit diagram of one embodiment of a word line driver 22A,which may be one of the word line drivers 22. Other word line drivers 22may be similar. The word line driver 22A generates the WL0 word line inthis embodiment. The word line driver 22A illustrates one embodiment ofa dynamic circuit for driving the word line WL0. In the illustratedembodiment, the word line driver 22A includes transistors T₁₄-T₁₈ and aninverter 60 supplied by the V_(M) supply voltage. T₁₄ has a sourcecoupled to the V_(M) supply voltage, a gate coupled to the clk_e clocksignal from the level shifter 20, and a drain coupled to the node N3.T₁₅-T₁₇ are coupled in series, with T₁₅ having its drain coupled to thenode N3 and T₁₇ having its source coupled to ground. The gates of T₁₅and T₁₆ are coupled to receive address inputs A1 and A2, and the gate ofT₁₇ is coupled to the clk clock signal from the clock gater 26. Theinput of the inverter 60 and the drain of T₁₈ are coupled to the nodeN3. The output of the inverter 60 is the word line WL0, and is alsocoupled to the gate of T₁₈, which has its source coupled to the V_(M)supply voltage.

The word line driver 22A is a dynamic NAND gate in this embodiment.Thus, T₁₄ precharges the node N3 in response to a deassertion of clk_e,and is deactivated in response to an assertion of clk_e. Since clk_e hasbeen level shifted to the V_(M) domain, the assertion of clk_e is to theV_(M) voltage and thus T14 may be fully deactivated while clk_e isasserted.

While clk_e is asserted, clk may be asserted to cause an evaluation ofthe dynamic NAND gate. If both of the A1 and A2 inputs are asserted, thetransistors T₁₅-T₁₇ discharge the node N3 and the word line WL0 isasserted (driven to the V_(M) supply voltage by the inverter 60). If oneor both of A1 and A2 inputs are deasserted, the node N3 is notdischarged and the word line WL0 is not asserted. T₁₈ may serve as akeeper if the node N3 is not discharged, preventing the node N3 fromfloating.

Since the clk clock signal and the inputs A1-A2 are not coupled to PMOStransistors (and thus do not require V_(M) voltage level to ensure thata PMOS is deactivated when the PMOS's source is coupled to the V_(M)supply voltage), the clk clock signal and the A1-A2 inputs may be in theV_(L) domain.

While a two input dynamic NAND gate is shown in the embodiment of FIG.6, any logic function on any number of inputs may be implemented inother embodiments.

Turning now to FIG. 7, a flowchart illustrating one embodiment of amethod is shown. The logic circuits 12 may read and/or write the memorycircuits 14 (block 70). The memory circuits 14 may respond to readsusing V_(L) signals (that is, signals in the V_(L) domain or referencedto V_(L)—block 72). The memory circuits may store write data providedusing V_(L) signals (block 74).

Numerous variations and modifications will become apparent to thoseskilled in the art once the above disclosure is fully appreciated. It isintended that the following claims be interpreted to embrace all suchvariations and modifications.

1. An integrated circuit comprising: at least one logic circuit suppliedby a first supply voltage during use, wherein a first voltage domaincorresponds to the first supply voltage; and at least one memory circuitcoupled to the logic circuit and supplied by a second supply voltageduring use, wherein a second voltage domain corresponds to the secondsupply voltage, and wherein the memory circuit comprises one or morecircuits that interface with the logic circuit, and wherein the one ormore circuits are configured to level shift at least one signal betweenthe first voltage domain and the second voltage domain, and wherein amagnitude of the first supply voltage is less than a magnitude of thesecond supply voltage at least a portion of the time during use, andwherein the logic circuit is configured to read and write the memorycircuit.
 2. The integrated circuit as recited in claim 1 wherein thememory circuit is supplied by the first supply voltage in addition tothe second supply voltage during use.
 3. The integrated circuit asrecited in claim 1 wherein the memory circuit comprises a first memorycell supplied by the second supply voltage and a word line drivercircuit supplied by the second supply voltage, wherein the first memorycell is coupled to receive a word line from the word line driver circuitto activate the first memory cell for access.
 4. The integrated circuitas recited in claim 3 wherein the one or more circuits comprise a levelshifter circuit supplied with the second supply voltage, wherein thelevel shifter circuit is coupled to receive an input signal from thelogic circuit and to level shift the input signal from the first voltagedomain to the second voltage domain, and wherein the level shiftercircuit is coupled to provide the level-shifted signal to the word linedriver circuit.
 5. The integrated circuit as recited in claim 4 whereinthe input signal comprises a clock signal, and wherein the word linedriver circuit comprises a dynamic logic circuit, and wherein the clocksignal triggers a precharge of the dynamic logic circuit.
 6. Theintegrated circuit as recited in claim 5 wherein the word line drivercircuit is further coupled to receive one or more additional inputsignals that are not level shifted.
 7. The integrated circuit as recitedin claim 4 wherein the level shifter circuit comprises an outputinverter comprising a series connection of two n-type metal oxidesemiconductor (NMOS) transistors, wherein a gate of a first of the NMOStransistors is coupled to receive the level-shifted signal, and whereina gate of a second of the NMOS transistors is coupled to the firstsupply voltage.
 8. The integrated circuit as recited in claim 7 whereinthe output inverter further comprises a series connection of two p-typemetal oxide semiconductor (PMOS) transistors, wherein a gate of a firstof the PMOS transistors is coupled to receive the level-shifted signal,and wherein a gate of a second of the PMOS transistors is coupled to thefirst supply voltage, and wherein a source of the second of the PMOStransistors is coupled to the second supply voltage.
 9. The integratedcircuit as recited in claim 1 wherein the memory circuit furthercomprises a plurality of memory cells coupled to a pair of bit lines,wherein the plurality of memory cells are supplied by the second supplyvoltage, and wherein the memory circuit comprises a bit line drivercircuit coupled to the pair of bit lines and configured to drive thepair of bit lines to write the first memory cell, and wherein the bitline driver circuit is supplied by the first supply voltage.
 10. Theintegrated circuit as recited in claim 1 wherein the memory circuitfurther comprises a plurality of memory cells coupled to a pair of bitlines, wherein the plurality of memory cells are supplied by the secondsupply voltage, and wherein the memory circuit comprises a senseamplifier circuit coupled to the pair of bit lines and configured tosense a value of a selected memory cell of the plurality of memory cellsfor output in response to a read, and wherein the sense amplifiercircuit is supplied with the first supply voltage.
 11. The integratedcircuit as recited in claim 1 wherein the memory circuit furthercomprises a bit line precharge circuit configured to precharge a pair ofbit lines to prepare for the read, and wherein the bit line prechargecircuit is supplied by the first supply voltage.
 12. The integratedcircuit as recited in claim 11 wherein the memory circuit furthercomprises a bit line hold circuit configured to hold the precharge onthe pair of bit lines during periods of inactivity, and wherein the bitline hold circuit is supplied by the first supply voltage.
 13. Theintegrated circuit as recited in claim 1 wherein the memory circuit isfurther configured not to level shift at least a second signal from thefirst voltage domain to the second voltage domain, wherein the memorycircuit comprises one or more p-type metal oxide semiconductor (PMOS)transistors having a source coupled to the second power supply, andwherein the second signal is not coupled to a gate of the one or morePMOS transistors.
 14. The integrated circuit as recited in claim 13wherein the signal level shifted by the one or more circuits is coupledto the gate of at least one of the one or more PMOS transistors.
 15. Amethod comprising: supplying a logic circuit with a first supplyvoltage; supplying a memory circuit with a second supply voltage havinga magnitude that is greater than a magnitude of the first supplyvoltage; the logic circuit generating a read to the memory circuit; thememory circuit responding to the read using signals that are referencedto the first supply voltage; and the memory circuit level shifting atleast one of a plurality of signals generated by the logic circuit toperform the read, the level shifting from a first voltage domaincorresponding to the first supply voltage to a second voltage domaincorresponding to the second supply voltage.
 16. The method as recited inclaim 15 further comprising: the logic circuit generating a write to thememory circuit using signals that are referenced to the first supplyvoltage, the write comprising write data; and the memory circuit storingthe write data from the logic circuit in one or more memory cellsreferenced to the second supply voltage.
 17. The method as recited inclaim 15 further comprising: powering down the first supply voltage; andnot powering down the second supply voltage while the first supplyvoltage is powered down.
 18. The method as recited in claim 15 wherein apair of bit lines are coupled to a plurality of memory cells in thememory circuit, the method further comprising operating the bit lines inthe first voltage domain.
 19. The method as recited in claim 15 furthercomprising not level shifting at least a second signal from the firstvoltage domain to the second voltage domain, wherein the second signalis not coupled to a gate of any p-type metal oxide semiconductor (PMOS)transistors that have a source coupled to the second supply voltage inthe memory circuit.
 20. An integrated circuit comprising: at least onelogic circuit supplied by a first supply voltage during use, wherein afirst voltage domain corresponds to the first supply voltage; and atleast one memory circuit coupled to the logic circuit and supplied by asecond supply voltage during use, wherein a second voltage domaincorresponds to the second supply voltage, and wherein the memory circuitcomprises one or more circuits that interface with the logic circuit,and wherein the one or more circuits are configured to level shift atleast one signal between the first voltage domain and the second voltagedomain, and wherein a magnitude of the first supply voltage is less thana magnitude of the second supply voltage at least a portion of the timeduring use, and wherein the logic circuit is configured to read andwrite the memory circuit, and wherein the memory circuit is furthersupplied by the first supply voltage in addition to the second supplyvoltage during use, wherein at least one of the one or more circuits ispowered by the first power supply voltage during use.
 21. The integratedcircuit as recited in claim 20 wherein the memory circuit comprises aplurality of pairs of bit lines, and wherein the memory circuitcomprises a plurality of bit line driver circuits, each bit line drivercircuit of the plurality of bit line driver circuits coupled to arespective pair of bit lines of the plurality of pairs of bit lines andconfigured to drive the respective pair of bit lines to write the firstmemory cell, and wherein the plurality of bit line driver circuits aresupplied by the first supply voltage.
 22. The integrated circuit asrecited in claim 20 wherein the memory circuit comprises a plurality ofpairs of bit lines, and wherein the memory circuit comprises a pluralityof bit line precharge circuits, each bit line precharge circuit of theplurality of bit line precharge circuits coupled to at least one bitline of the plurality of pairs of bit lines and configured to prechargethe bit line to prepare for a read, and wherein the plurality of bitline precharge circuits are supplied by the first supply voltage.
 23. Anintegrated circuit comprising: at least one logic circuit supplied by afirst supply voltage during use, wherein a first voltage domaincorresponds to the first supply voltage; and at least one memory circuitcoupled to the logic circuit and supplied by a second supply voltageduring use, wherein a second voltage domain corresponds to the secondsupply voltage, and wherein the memory circuit comprises one or morecircuits that interface with the logic circuit, and wherein the one ormore circuits are configured to level shift at least one signal betweenthe first voltage domain and the second voltage domain, and wherein amagnitude of the first supply voltage is less than a magnitude of thesecond supply voltage at least a portion of the time during use, andwherein the logic circuit is configured to read and write the memorycircuit, wherein the memory circuit comprises a plurality of prechargecircuits configured to precharge lines in the memory circuit, andwherein the plurality of precharge circuits are supplied by the firstsupply voltage.